Flash memory is a manner of non-volatile recollection so as to can be electrically erased and rewrite, which means that it does not need power to maintain the information stored in the chip. In addition, flicker memory offers momentary interpret access period and outshine shock resistance than durable disks. These characteristics vindicate the popularity of flash reminiscence for applications such as storage on battery-powered devices.
Flash recollection is advance on or after of EEPROM (Electrically-Erasable Programmable Read-Only Memory) that allows several memory locations to be erased or written in one programming operation. different an EPROM (Electrically Programmable Read-Only Memory) an EEPROM can be programmed and erased multiple epoch electrically. Normal EEPROM only allows one location at a phase to be erased or written, importance to flare can manage at higher in force speeds while the systems using; it read and create to different locations at the same time.
Sabtu, 04 April 2009
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